number: db-151 march 2010, revision d page 1 tak cheong ? semiconductor 20a schottky barrier diode full pack high voltage schottky rectifier specification features: ? high voltage wide range selection, 100v, 150v & 200v ? high switching speed device ? low forward voltage drop ? low power loss and high efficiency ? guard ring for over-voltage protection ? high surge capability ? rohs compliant ? matte tin(sn) lead finish ? terminal leads surface is corrosion resistant and can withstand to 260c wave soldering or per mil-std-750, method 2026. device marking diagram polarity configuration maximum ratings (per leg, unless otherwise specified ) symbol parameter MBRF20100CT mbrf20150ct mbrf20200ct units v rrm v rwm v r maximum repetitive reverse voltage working peak reverse voltage maximum dc reverse voltage 100 150 200 v i f(av) average rectified forward current per leg per package 10 20 a i fsm non-repetitive peak forward surge current 8.3ms single phase @ rated load 150 a t stg storage temperature range -65 to +150 c t j operating junction temperature +150 c these ratings are limiting values above which the serviceability of the diode may be impaired. thermal characteristics t a = 25c unless otherwise noted symbol parameter value units r jc maximum thermal resistance, junction-to-case 2.0 c/w r ja maximum thermal resistance, junction-to-ambient (per leg) 60 c/w electrical characteristics (per diode ) t a = 25c unless otherwise noted MBRF20100CT mbrf20150ct mbrf20200ct symbol parameter test condition (note 1) min max min max min max units i r reverse current @ rated v r --- 200 --- 200 --- 200 a v f forward voltage i f = 10a i f = 20a --- 0.85 0.95 --- 0.92 1.00 --- 1.00 1.25 v note/s: 1. tested under pulse condition of 300 s. MBRF20100CT through mbrf20200ct 1 2 3 to-220fp 1. anode 2. cathode 3. anode l xxyy line 2 line 3 line 4 l = tak cheong logo xxyy = monthly date code line 2 = mbrf line 3 = 20xxxct line 4 = polarity
number: db-151 march 2010, revision d page 2 tak cheong ? semiconductor typical characteristics f = 1mhz ta = 25 10.0 100.0 1000.0 0 5 10 15 20 25 30 35 40 reverse voltage [v] typical junction capacitance [pf] mbr f 20150c t mbr f 20200c t mbr f 20100c t 0 4 8 12 16 20 0 25 50 75 100 125 150 tc - case temperature [ ] average forward current [a] 0.001 0.010 0.100 1.000 10.000 100.000 1000.000 10000.000 0 20 40 60 80 100 120 140 160 180 200 vr - reverse voltage [v] ir - reverse current [ua] ) ta=25 ta=75 ta=125 ta= 150 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 vf - instantaneours forward voltage [v] if - forward current [ma ] ta=75 ta=125 ta=150 ta=25 0.001 0.010 0.100 1.000 10.000 100.000 1000.000 10000.000 0 15 304560 7590105120135150 vr - reverse voltage [v] ir - reverse current [ua] ) ta=25 ta=75 ta=125 ta= 150 0.010 0.100 1.000 10.000 100.000 1000.000 10000.000 0 1020 3040 50 6070 8090100 vr - reverse voltage [v] ir - reverse current [ua] ) ta=25 ta=75 ta=125 ta= 150 figure 1. forward current derating curve (per diode) figure 2. junction capacitance (per diode) figure 3. MBRF20100CT typical reverse current (per diode) figure 4. mbrf20150ct typical reverse current (per diode) figure 5. mbrf20200ct typical reverse current (per diode) figure 6. MBRF20100CT typical forward voltage (per diode)
number: db-151 march 2010, revision d page 3 tak cheong ? semiconductor to220fp sg package outline millimeters inches dim min max min max a1 2.7 3.3 0.106 0.130 a2 15.0 15.7 0.591 0.618 a4 6.2 6.6 0.244 0.260 b 0.5 0.9 0.020 0.035 b1 0.9 1.2 0.035 0.047 b2 1.0 1.2 0.039 0.047 c 0.4 0.6 0.016 0.024 d 9.8 10.3 0.386 0.406 e 2.34 2.74 0.092 0.108 e 4.3 4.6 0.169 0.181 e1 2.5 2.9 0.098 0.114 f 2.6 3.0 0.102 0.118 l 10.3 10.7 0.406 0.421 ?p 3.0 3.4 0.118 0.134 q 2.3 2.7 0.091 0.106 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 vf - instantaneous forw ard voltage [v] if - forward currect [ma] ta=75 ta=125 ta=150 ta=25 0.01 0.1 1 10 100 00.20.40.60.81 vf - instantaneous forward voltage [v] if - forward current [ma ] ta=75 ta=125 ta=150 ta=25 figure 7. mbrf20150ct typical forward voltage (per diode) figure 8. mbrf20200ct typical forward voltage (per diode)
number: db-100 april 14, 2008 / a disclaimer notice tak cheong ? notice the information presented in this document is for reference only. tak cheong reserves the right to make changes without notice for the specification of the products displayed herein. the product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controlle rs and other safety devices), tak cheong semiconductor co., ltd., or anyone on its behalf, assumes no responsi bility or liability for any damagers resulting from such improper use of sale. this publication supersedes & replaces all information reviously supplied. for additional information, please visit our website http://www.takcheong.com , or consult your nearest tak cheong?s sales office for further assistance.
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